The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Dec. 21, 2015
International Business Machines Corporation, Armonk, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Anthony J. Annunziata, Stamford, CT (US);
Sebastian U. Engelmann, White Plains, NY (US);
Eric A. Joseph, White Plains, NY (US);
Gen P. Lauer, Yorktown Heights, NY (US);
Nathan P. Marchack, White Plains, NY (US);
Deborah A. Neumayer, Danbury, CT (US);
Masahiro Yamazaki, Elmsford, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A method of making a magnetic random access memory device comprises forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a reference layer positioned in contact with the electrode, a tunnel barrier layer arranged on the reference layer, and a free layer arranged on the tunnel barrier layer; and depositing an encapsulating layer on and along sidewalls of the magnetic tunnel junction at a temperature of 40 to 60° C. using remote microwave plasma deposition wherein the encapsulation layer comprises silicon and nitrogen. An MRAM device made by the aforementioned method is also disclosed.