The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

Dec. 22, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Sunil Kumar Singh, Mechanicville, NY (US);

Sohan Singh Mehta, Saratoga Springs, NY (US);

Ravi Prakash Srivastava, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76817 (2013.01); H01L 21/76814 (2013.01); H01L 21/76879 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01);
Abstract

Back end of line via formation for semiconductor devices and methods of fabricating the semiconductor devices. One method includes, for instance: obtaining a wafer with a substrate and at least one contact in the substrate; depositing at least one lithography stack over the substrate; performing lithography to pattern at least one via opening; depositing a block co-polymer coating over the wafer into the at least one via opening; performing an ashing to remove excess block co-polymer material and form block co-polymer caps; and performing a thermal bake to separate the block co-polymer caps into a first material and a second material. An intermediate semiconductor device is also disclosed.


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