The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Oct. 12, 2015
Entegris, Inc., Billerica, MA (US);
Emanuel I. Cooper, Scarsdale, NY (US);
Eileen Sparks, Clarksburg, MD (US);
William R. Bowers, Colorado Springs, CO (US);
Mark A. Biscotto, Burnet, TX (US);
Kevin P. Yanders, Germansville, PA (US);
Michael B. Korzenski, Bethel, CT (US);
Entegris, Inc., Billerica, MA (US);
Abstract
Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min.