The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2017

Filed:

Oct. 29, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Karthick Murukesan, Hsinchu, TW;

Yi-Cheng Chiu, New Taipei, TW;

Hung-Chou Lin, Yunlin County, TW;

Chih-Yuan Chan, Kaohsiung, TW;

Yi-Min Chen, Hsinchu, TW;

Chen-Chien Chang, Hsinchu County, TW;

Chiu-Hua Chung, Hsinchu, TW;

Fu-Chih Yang, Kaohsiung County, TW;

Chun Lin Tsai, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/1083 (2013.01); H01L 29/1095 (2013.01); H01L 29/402 (2013.01);
Abstract

In some embodiments, a semiconductor device includes a transistor, an isolation component, and a conductive layer. The transistor includes a source region and a drain region. The isolation component surrounds the source region. The conductive layer is configured for interconnection of the drain region. The conductive component is between the conductive layer and the isolation component, configured to shield the isolation component from an electric field over the isolation component.


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