The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Jun. 09, 2013
Applicant:
Cree, Inc., Durham, NC (US);
Inventors:
Saptharishi Sriram, Cary, NC (US);
Terry Alcorn, Cary, NC (US);
Fabian Radulescu, Chapel Hill, NC (US);
Scott Sheppard, Chapel Hill, NC (US);
Assignee:
CREE, INC., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42356 (2013.01); H01L 29/402 (2013.01); H01L 29/42316 (2013.01); H01L 29/778 (2013.01); H01L 29/7787 (2013.01); H01L 29/2003 (2013.01);
Abstract
A multi-stage transistor device is described. One embodiment of such a device is a dual-gate transistor, where the second stage gate is separated from a barrier layer by a thin spacer layer and is grounded through a connection to the source. In one embodiment the thin spacer layer and the second stage gate are placed in an aperture in a spacer layer. In another embodiment, the second stage gate is separated from a barrier layer by a spacer layer. The device can exhibit improved linearity and reduced complexity and cost.