The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2017

Filed:

Dec. 16, 2014
Applicant:

Stats Chippac, Ltd., Singapore, SG;

Inventors:

JaeHyun Lee, Kyungki-do, KR;

SunJae Kim, Seoul, KR;

JoongGi Kim, Pusan, KR;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/31 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/525 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/4867 (2013.01); H01L 21/768 (2013.01); H01L 23/3121 (2013.01); H01L 23/3128 (2013.01); H01L 23/49838 (2013.01); H01L 23/49894 (2013.01); H01L 23/5221 (2013.01); H01L 23/5252 (2013.01); H01L 23/5256 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 24/13 (2013.01); H01L 2224/10175 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81385 (2013.01); H01L 2224/81411 (2013.01); H01L 2224/81424 (2013.01); H01L 2224/81439 (2013.01); H01L 2224/81444 (2013.01); H01L 2224/81447 (2013.01); H01L 2224/81455 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/94 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01);
Abstract

A semiconductor device has a semiconductor die with a plurality of bumps formed over a surface of the semiconductor die. A first conductive layer having first and second segments is formed over a surface of the substrate with a first vent separating an end of the first segment and the second segment and a second vent separating an end of the second segment and the first segment. A second conductive layer is formed over the surface of the substrate to electrically connect the first segment and second segment. The thickness of the second conductive layer can be less than a thickness of the first conductive layer to form the first vent and second vent. The semiconductor die is mounted to the substrate with the bumps aligned to the first segment and second segment. Bump material from reflow of the bumps is channeled into the first vent and second vent.


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