The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Jul. 24, 2015
Kwangjin Moon, Hwaseong-si, KR;
Sunghee Kang, Seongnam-si, KR;
Taeseong Kim, Suwon-si, KR;
Byung Lyul Park, Seoul, KR;
Yeun-sang Park, Yongin-si, KR;
Sukchul Bang, Yongin-si, KR;
Kwangjin Moon, Hwaseong-si, KR;
SungHee Kang, Seongnam-si, KR;
Taeseong Kim, Suwon-si, KR;
Byung Lyul Park, Seoul, KR;
Yeun-Sang Park, Yongin-si, KR;
Sukchul Bang, Yongin-si, KR;
Abstract
Provided are semiconductor devices and methods of fabricating the same. The device may include a substrate including a first surface and a second surface opposing each other, a through-silicon-via (TSV) electrode provided in a via hole that may be formed to penetrate the substrate, and an integrated circuit provided adjacent to the through electrode on the first surface. The through electrode includes a metal layer filling a portion of the via hole and an alloy layer filling a remaining portion of the via hole. The alloy layer contains at least two metallic elements, one of which may be the same as that contained in the metal layer, and the other of which may be different from that contained in the metal layer.