The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Apr. 13, 2015
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Mirzafer Abatchev, Fremont, CA (US);
David Wells, Boise, ID (US);
Baosuo Zhou, Boise, ID (US);
Krupakar Murali Subramanian, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01R 9/00 (2006.01); H05K 3/00 (2006.01); H01L 21/3105 (2006.01); H01L 21/033 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31051 (2013.01); H01L 21/0337 (2013.01); H01L 21/306 (2013.01); H01L 21/30625 (2013.01); H01L 21/31055 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); Y10T 29/4922 (2015.01); Y10T 29/49128 (2015.01); Y10T 29/49146 (2015.01); Y10T 29/49151 (2015.01); Y10T 29/49155 (2015.01); Y10T 29/49171 (2015.01); Y10T 29/49172 (2015.01); Y10T 29/49176 (2015.01); Y10T 29/49224 (2015.01);
Abstract
Various pattern transfer and etching steps can be used to create features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed, pitch-reduced patterns of crossing elongate features that can be consolidated into a single layer. Planarizing techniques using a filler layer and a protective layer are disclosed. Portions of an integrated circuit having different heights can be etched to a common plane.