The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Aug. 24, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Tien-I Wu, Taoyuan, TW;
I-Cheng Hu, Kaohsiung, TW;
Yu-Shu Lin, Pingtung County, TW;
Shu-Yen Chan, Changhua County, TW;
Neng-Hui Yang, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
The present invention provides a metal oxide semiconductor (MOS) device, including a substrate, a gate structure on the substrate and a source/drain region disposed in the substrate at one side of the gate structure and in at least a part of an epitaxial structure, wherein the epitaxial structure includes a first buffer layer, which is an un-doped buffer layer, including a bottom portion disposed on a bottom surface of the epitaxial structure and a sidewall portion disposed on a concave sidewall of the epitaxial structure, an epitaxial layer which is encompassed by the first buffer layer, and a semiconductor layer which is disposed between the first buffer layer and the epitaxial layer. The source/drain region is disposed in the epitaxial structure.