The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Oct. 22, 2015
Qualcomm Incorporated, San Diego, CA (US);
Daeik Daniel Kim, Del Mar, CA (US);
Changhan Hobie Yun, San Diego, CA (US);
Je-Hsiung Jeffrey Lan, San Diego, CA (US);
Niranjan Sunil Mudakatte, San Diego, CA (US);
Jonghae Kim, San Diego, CA (US);
Matthew Michael Nowak, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Isolated complementary metal-oxide semiconductor (CMOS) devices for radio-frequency (RF) circuits are disclosed. In some aspects, an RF circuit includes CMOS devices, a silicon substrate having doped regions that define the CMOS devices, and a trench through the silicon substrate. The trench through the silicon substrate forms a continuous channel around the doped regions of one of the CMOS devices to electrically isolate the CMOS device from other CMOS devices embodied on the silicon substrate. By so doing, performance characteristics of the CMOS device, such as linearity and signal isolation, may be improved over those of conventional CMOS devices (e.g., bulk CMOS).