The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Feb. 25, 2016
Globalfoundries Inc., Grand Cayman, KY;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A semiconductor structure including a nonvolatile memory cell element including an active region formed in a semiconductor material, a select gate structure, a dummy control gate structure and a transfer gate structure is provided. Additionally, an electrically insulating structure extending around each of the select gate structure, the dummy control gate structure and the transfer gate structure is provided. The dummy control gate structure is removed, wherein a first recess is formed in the semiconductor structure. After removing the dummy gate structure, a charge trapping layer and a layer of a control gate electrode material are deposited over the semiconductor structure. Portions of the charge trapping layer and the layer of the control gate electrode material over the electrically insulating structure are removed. Portions of the charge trapping layer and the layer of control gate electrode material in the recess provide a control gate structure of the nonvolatile memory cell.