The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Nov. 12, 2015
Applicants:
Jae-hwa Park, Yongin-si, KR;
Kwangjin Moon, Hwaseong-si, KR;
Byung Lyul Park, Seoul, KR;
Sukchul Bang, Yongin-si, KR;
Inventors:
Jae-Hwa Park, Yongin-si, KR;
Kwangjin Moon, Hwaseong-si, KR;
Byung Lyul Park, Seoul, KR;
Sukchul Bang, Yongin-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/50 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 23/50 (2013.01); H01L 23/528 (2013.01); H01L 2224/13 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Semiconductor devices having through-electrodes are provided. The semiconductor devices may include a substrate, a through-electrode penetrating vertically through the substrate, a circuit layer on the substrate and metal lines in the circuit layer. The metal lines may include two first metals on opposing edges of a top surface of the through-electrode and second metals above the top surface of the through-electrode. At least some of the second metals may not vertically overlap the two first metals.