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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9666436 B1

PDFFull Text
Date of Patent:
May. 30, 2017

Filed:

Dec. 31, 2013

Ion implantation methods

Applicant:

Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);

Inventors:

Cheng-Bai Xu, Southborough, MA (US);

Cheng Han Wu, Marlborough, MA (US);

Dong Won Chung, Gyeonggi-do, KR;

Yoshihiro Yamamoto, Niigata, JP;

Assignee:

Rohm and Haas Electronic Materials LLC, Marlborough, MA (US);

Attorney:

Jonathan D. Baskin

Primary Examiner:

Xinning Niu

Assistant Examiner:

Vu A Vu

Int. Cl.
CPC ...
H01L 21/425 (2006.01); H01L 21/266 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/266 (2013.01); H01L 21/0206 (2013.01); H01L 21/0273 (2013.01); H01L 21/02118 (2013.01); H01L 21/31058 (2013.01);
Abstract

Provided are methods of forming an ion implanted region in a semiconductor device. The methods comprise: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent; (c) coating a descumming composition over the photoresist pattern, wherein the descumming composition comprises: a matrix polymer; a free acid; and a solvent; (d) heating the coated semiconductor substrate; (e) contacting the coated semiconductor substrate with a rinsing agent to remove residual descumming composition and scum from the substrate; and (f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask. The methods find particular applicability in the manufacture of semiconductor devices.

Find Patent Forward Citations

Xu, Cheng-Bai. (2017). Ion implantation methods (U.S. Patent No. 9666436). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9666436

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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