The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2017

Filed:

Nov. 30, 2015
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

John C. Forster, Mountain View, CA (US);

Anantha Subramani, San Jose, CA (US);

Wei D. Wang, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/24 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32477 (2013.01); C23C 14/34 (2013.01); H01J 37/32495 (2013.01); H01L 21/02043 (2013.01); H01L 21/67005 (2013.01);
Abstract

A method and apparatus are described for reducing particle contamination in a plasma processing chamber. In one embodiment, a pasting disk is provided which includes a disk-shaped base of high-resistivity material that has an electrically conductive pasting material layer applied to a top surface of the base so that the pasting material layer partially covers the top surface of the base. The pasting disk is sputter etched to deposit conductive pasting material over a wide area on the interior surfaces of a plasma processing chamber while minimizing deposition on dielectric components that are used to optimize the sputter etch process during substrate processing.


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