The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2017
Filed:
Apr. 19, 2013
Ngk Insulators, Ltd., Nagoya, JP;
Nobuyuki Kobayashi, Nagoya, JP;
Kazuki Maeda, Nagoya, JP;
Koichi Kondo, Nagoya, JP;
Tsutomu Nanataki, Nagoya, JP;
Katsuhiro Imai, Nagoya, JP;
Jun Yoshikawa, Nagoya, JP;
NGK Insulators, Ltd., Nagoya, JP;
Abstract
A crystal production method according to the present invention includes a film formation and crystallization step of spraying a raw material powder containing a raw material component to form a film containing the raw material component on a seed substrate containing a single crystal at a predetermined single crystallization temperature at which single crystallization of the raw material component occurs, and crystallizing the film containing the raw material while maintaining the single crystallization temperature. In the film formation and crystallization step, preferably, the single crystallization temperature is 900° C. or higher. Furthermore, in the film formation and crystallization step, preferably, the raw material powder and the seed substrate are each a nitride or an oxide.