The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Oct. 15, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chun Hua Chang, Zhubei, TW;
Der-Chyang Yeh, Hsinchu, TW;
Kuang-Wei Cheng, Hsinchu, TW;
Yuan-Hung Liu, Hsinchu, TW;
Shang-Yun Hou, Jubei, TW;
Wen-Chih Chiou, Miaoli, TW;
Shin-Puu Jeng, Hsinchu, TW;
Abstract
A method of forming a device comprises forming a through via extending from a surface of a substrate into the substrate. The method also comprises forming a first insulating layer over the surface of the substrate. The method further comprises forming a first metallization layer in the first insulating layer, the first metallization layer electrically connecting the through via. The method additionally comprises forming a capacitor over the first metallization layer. The capacitor comprises a first capacitor dielectric layer over the first metallization layer and a second capacitor dielectric layer over the first capacitor dielectric layer. The method also comprises forming a second metallization layer over and electrically connecting the capacitor.