The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Dec. 23, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hisn-Chu, TW;

Inventors:

Chia-Hao Yu, Hsin-Chu, TW;

Yuan-Chih Chu, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/02 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02277 (2013.01); C23C 16/047 (2013.01); H01L 21/0262 (2013.01); H01L 21/02521 (2013.01);
Abstract

A method of depositing a material on a surface is disclosed. The method includes focusing a radiation beam on the surface and introducing a precursor gas near the surface wherein the precursor gas forms the material on the surface upon radiation by the radiation beam. The method further includes introducing an assistant gas near the surface wherein the assistant gas produces nitric oxide radicals upon radiation by the radiation beam. The nitric oxide radicals facilitate the dissociation process of the precursor gas and reduce contaminants in the deposited material.


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