The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Jul. 15, 2015
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Kang Sub Yim, Palo Alto, CA (US);

Mahendra Chhabra, San Jose, CA (US);

Kelvin Chan, San Ramon, CA (US);

Alexandros T. Demos, Fremont, CA (US);

Priyanka Dash, Menlo Park, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02203 (2013.01); H01L 21/3105 (2013.01); H01L 21/0272 (2013.01); H01L 21/02126 (2013.01);
Abstract

Embodiments described herein generally relate to methods for processing a dielectric film on a substrate with UV energy. In one embodiment, a precursor film is deposited on the substrate, and the precursor film includes a plurality of porogen molecules. The precursor film is first exposed to UV energy at a first temperature to initiate a cross-linking process. After a first predetermined time, the temperature of the precursor film is increased to a second temperature for a second predetermined time to remove porogen molecules and to continue the cross-linking process. The resulting film is a porous low-k dielectric film having improved elastic modulus and hardness.


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