The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Apr. 30, 2015
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yuuki Kobayashi, Nirasaki, JP;

Hirokazu Ueda, Nirasaki, JP;

Kohei Yamashita, Miyagi, JP;

Peter L. G. Ventzek, Austin, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 3/443 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); H01J 37/317 (2006.01); H01L 21/265 (2006.01); H01J 37/32 (2006.01); H01L 21/223 (2006.01);
U.S. Cl.
CPC ...
G01J 3/443 (2013.01); H01J 37/3171 (2013.01); H01J 37/32192 (2013.01); H01J 37/32412 (2013.01); H01J 37/32935 (2013.01); H01J 37/32972 (2013.01); H01L 21/2236 (2013.01); H01L 21/265 (2013.01); H01L 21/67 (2013.01); H01L 21/67253 (2013.01); H01L 22/10 (2013.01);
Abstract

There is provided a plasma processing apparatus, which includes: a processing chamber into which a target substrate is loaded and in which a dopant is implanted into the target substrate using a plasma of a gas which contains an element used as the dopant; a wall probe configured to measure a change in voltage corresponding to a density of charged particles in the plasma generated within the processing chamber; an OES (Optical Emission Spectrometer) configured to measure a light emission intensity of the dopant existing in the plasma; and a calculation unit configured to calculate a dose amount of the dopant implanted into the target substrate, based on a measurement result obtained at the wall probe and a measurement result obtained at the OES.


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