The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2017

Filed:

Nov. 08, 2011
Applicants:

Kwangduk Douglas Lee, Redwood City, CA (US);

Sudha Rathi, San Jose, CA (US);

Chiu Chan, Foster City, CA (US);

Martin J. Seamons, San Jose, CA (US);

Bok Heon Kim, San Jose, CA (US);

Inventors:

Kwangduk Douglas Lee, Redwood City, CA (US);

Sudha Rathi, San Jose, CA (US);

Chiu Chan, Foster City, CA (US);

Martin J. Seamons, San Jose, CA (US);

Bok Heon Kim, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/67 (2006.01); C23C 16/02 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6704 (2013.01); C23C 16/0245 (2013.01); H01L 21/02063 (2013.01); H01L 21/31122 (2013.01); H01L 21/31144 (2013.01); H01L 21/76814 (2013.01);
Abstract

Embodiments of the invention generally relate to methods of removing and/or cleaning a substrate surface having different material layers disposed thereon using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a substrate includes positioning a substrate into a processing chamber, the substrate having a dielectric layer disposed thereon forming openings on the substrate, exposing the dielectric layer disposed on the substrate to water vapor supplied into the chamber to form a plasma in the water vapor, maintaining a process pressure in the chamber at between about 1 Torr and about 120 Torr, and cleaning the contact structure formed on the substrate.


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