The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2017

Filed:

Dec. 03, 2014
Applicant:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventors:

Yuankun Hou, Shanghai, CN;

Kuanchieh Yu, Shanghai, CN;

Yu Hua, Shanghai, CN;

Yuelin Zhao, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 21/308 (2006.01); H01L 25/00 (2006.01); H01L 23/10 (2006.01); H01L 23/00 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/308 (2013.01); H01L 23/10 (2013.01); H01L 24/29 (2013.01); H01L 24/30 (2013.01); H01L 24/92 (2013.01); H01L 24/94 (2013.01); H01L 25/50 (2013.01); H01L 22/12 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/08 (2013.01); H01L 24/27 (2013.01); H01L 24/32 (2013.01); H01L 24/80 (2013.01); H01L 24/83 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/0612 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/08148 (2013.01); H01L 2224/2761 (2013.01); H01L 2224/29011 (2013.01); H01L 2224/29012 (2013.01); H01L 2224/29013 (2013.01); H01L 2224/29014 (2013.01); H01L 2224/29078 (2013.01); H01L 2224/30145 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32148 (2013.01); H01L 2224/80011 (2013.01); H01L 2224/8081 (2013.01); H01L 2224/80203 (2013.01); H01L 2224/80805 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/83011 (2013.01); H01L 2224/8381 (2013.01); H01L 2224/83193 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83805 (2013.01); H01L 2224/9211 (2013.01); H01L 2224/94 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/00015 (2013.01); H01L 2924/163 (2013.01);
Abstract

A method of forming a sealing structure for a bonded wafer is provided. The method includes providing the lower wafer and the upper wafer, forming a sealing material layer on each of the lower wafer and the upper wafer, forming a mask layer on the sealing material layer on each of the lower wafer and the upper wafer, etching the sealing material layer using the mask layer as an etch mask, so as to form a first protrusion at an edge of the lower wafer and a second protrusion at an edge of the upper wafer, and bonding the first protrusion and the second protrusion together to form the sealing structure. The sealing structure encloses a gap between the lower wafer and the upper wafer at an edge of the bonded wafer, so as to form a hermetically sealed cavity at the edge of the bonded wafer.


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