The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2017

Filed:

May. 22, 2014
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Hans-Joachim Schulze, Taufkirchen, DE;

Andreas Haertl, Munich, DE;

Francisco Javier Santos Rodriguez, Villach, AT;

André Rainer Stegner, Munich, DE;

Daniel Schloegl, Villach, AT;

Assignee:

Infineon Technologies AG, Neubiberg, GB;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 21/04 (2006.01); H01L 29/47 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0435 (2013.01); H01L 21/28512 (2013.01); H01L 21/28537 (2013.01); H01L 29/47 (2013.01);
Abstract

A method for processing a semiconductor device in accordance with various embodiments may include: depositing a first metallization material over a semiconductor body; performing a heating process so as to form at least one region in the semiconductor body including a eutectic of the first metallization material and material of the semiconductor body; and depositing a second metallization material over the semiconductor body so as to contact the semiconductor body via the at least one region in the semiconductor body.


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