The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2017

Filed:

Mar. 17, 2016
Applicant:

Ims Nanofabrication Ag, Vienna, AT;

Inventors:

Elmar Platzgummer, Vienna, AT;

Klaus Schiessl, Vienna, AT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/52 (2006.01); H01J 37/10 (2006.01); H01J 37/317 (2006.01); H01J 37/302 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3177 (2013.01); H01J 37/3026 (2013.01); H01J 2237/31764 (2013.01); H01J 2237/31769 (2013.01);
Abstract

To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. For a pattern which comprises a primary pattern region to be written with a predetermined primary feature size and a secondary pattern region which is composed of structure features capable of being written with a secondary feature size, larger than the primary feature size. The structure features of the primary pattern region are written by exposing a plurality of exposure spots on grid positions of a first exposure grid; the structure features in the secondary pattern region are written by exposing a plurality of exposure spots on grid positions of a second exposure grid according to a second arrangement which is coarser that the regular arrangement of the first exposure grid.


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