The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Feb. 05, 2016
Applied Materials Israel Ltd., Rehovot, IL;
Carl Zeiss Microscopy Gmbh, Oberkochen, DE;
Dirk Zeidler, Oberkochen, DE;
Thomas Kemen, Aalen, DE;
Anger Pascal, Aalen, DE;
Antonio Casares, Aalen, DE;
Christof Riedesel, Essingen, DE;
CARL ZEISS MICROSCOPY GMBH, Jena, DE;
APPLIED MATERIALS ISRAEL LTD., Rehovot, IL;
Abstract
The present invention concerns a charged-particle multi-beamlet system that comprises a source of charged particles (); a first multi-aperture plate () having plural apertures disposed in a charged particle beam path of the system downstream of the source; a first multi-aperture selector plate () having plural apertures; a carrier (), wherein the first multi-aperture selector plate is mounted on the carrier; and an actuator () configured to move the carrier such that the first multi-aperture selector plate is disposed in the charged particle beam path of the system downstream of the source in a first mode of operation of the system, and such that the first multi-aperture selector plate is disposed outside of the charged particle beam path in a second mode of operation of the system. The source, the first multi-aperture plate and the carrier of the system are arranged such that a first number of charged particle beamlets is generated at a position downstream of both the first multi-aperture plate and the first multi-aperture selector plate in the first mode of operation, and that a second number of charged particle beamlets is generated at the position in the second mode of operation, wherein the first number of beamlets differs from the second number of beamlets.