The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Oct. 22, 2015
Hoya Corporation, Tokyo, JP;
Masahiro Hashimoto, Tokyo, JP;
Atsushi Kominato, Tokyo, JP;
Hiroyuki Iwashita, Tokyo, JP;
Osamu Nozawa, Tokyo, JP;
HOYA CORPORATION, Shinjuku-ku, Tokyo, JP;
Abstract
Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blankis used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding filmon a transparent substrate. The light-shielding filmis composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles.