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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9647084 B1

PDFFull Text
Expired
Date of Patent:
May. 09, 2017

Filed:

Dec. 11, 2015

Semiconductor device and method of manufacturing the same

Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventors:

Shirou Ozaki, Yamato, JP;

Naoya Okamoto, Isehara, JP;

Kozo Makiyama, Kawasaki, JP;

Toshihiro Ohki, Hadano, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:

Kratz, Quintos & Hanson, LLP

Primary Examiner:

Mohammed Shamsuzzaman

Int. Cl.
CPC ...
H02M 5/45 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 21/768 (2006.01); H01L 29/778 (2006.01); H01L 29/205 (2006.01); H01L 23/31 (2006.01); H01L 29/20 (2006.01); H01L 23/532 (2006.01); H01L 21/283 (2006.01); H01L 21/764 (2006.01); H02M 5/458 (2006.01); H03F 3/19 (2006.01); H01L 23/522 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/283 (2013.01); H01L 21/764 (2013.01); H01L 21/7682 (2013.01); H01L 21/76825 (2013.01); H01L 21/76826 (2013.01); H01L 21/76879 (2013.01); H01L 23/315 (2013.01); H01L 23/53295 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/408 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H02M 5/458 (2013.01); H03F 3/19 (2013.01); H01L 23/5222 (2013.01); H01L 29/78 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device includes: a first electrode; a second electrode; an interlayer insulating film made of a porous insulating material and formed above the first electrode and the second electrode; and connection parts electrically connected to the first electrode and the second electrode respectively, wherein a cavity is formed between the interlayer insulating film and a surface of the first electrode, a surface of the second electrode, and parts of surfaces of the connection parts.

Find Patent Forward Citations

Ozaki, Shirou. (2017). Semiconductor device and method of manufacturing the same (U.S. Patent No. 9647084). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9647084

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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