The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Jun. 29, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Chee-Wee Liu, Taipei, TW;
Hung-Chih Chang, Taichung, TW;
Cheng-Yi Peng, Taipei, TW;
Chih-Sheng Chang, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 27/12 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01); H01L 23/535 (2006.01); H01L 21/822 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1211 (2013.01); H01L 21/8221 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 21/845 (2013.01); H01L 23/535 (2013.01); H01L 27/0688 (2013.01); H01L 27/0924 (2013.01); H01L 29/0646 (2013.01);
Abstract
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first fin field effect transistor (FinFET) disposed over a substrate, and a second FinFET device disposed over the first FinFET. A junction isolation material is disposed between a source of the first FinFET and a source of the second FinFET.