The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Jul. 01, 2015
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/31111 (2013.01); H01L 21/67069 (2013.01); H01L 21/67109 (2013.01);
Abstract
A method for etching a silicon oxide film on a target substrate where an etching area is partitioned by pattern layers and stopping the etching before a base layer of the silicon oxide layer is etched is disclosed. The method includes heating the target substrate in a vacuum atmosphere and intermittently supplying, as an etching gas, at least one of a processing gas containing a hydrogen fluoride gas and an ammonia gas in a pre-mixed state and a processing gas containing a compound of nitrogen, hydrogen and fluorine to the target substrate from a gas supply unit multiple times.