The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
May. 20, 2016
International Business Machines Corporation, Armonk, NY (US);
Jsr Corporation, Tokyo, JP;
Tatsuyoshi Kawamoto, Mie, JP;
Mahadevaiyer Krishnan, Hopewell Junction, NY (US);
Yohei Oishi, White Plains, NY (US);
Dinesh Kumar Penigalapati, Guilderland, NY (US);
Rachel S. Steiner, New York, NY (US);
James A. Tornello, Cortlandt Manor, NY (US);
Tatsuya Yamanaka, Mie, JP;
International Business Machines Corporation, Armonk, NY (US);
JSR CORPORATION, Tokyo, JP;
Abstract
Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.