The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Oct. 28, 2016
Unisantis Electronics Singapore Pte. Ltd., Peninsula Plaza, SG;
Fujio Masuoka, Tokyo, JP;
Hiroki Nakamura, Tokyo, JP;
UNISANTIS ELECTRONICS SIGNAPORE PTE. LTD., Singapore, SG;
Abstract
A method for producing a semiconductor device includes a first step of forming a first insulating film around a fin-shaped semiconductor layer; a second step of forming a first pillar-shaped semiconductor layer, a first dummy gate, a second pillar-shaped semiconductor layer, and a second dummy gate; a third step of forming a third dummy gate and a fourth dummy gate; a fourth step of forming a third diffusion layer in an upper portion of the fin-shaped semiconductor layer, in a lower portion of the first pillar-shaped semiconductor layer, and in a lower portion of the second pillar-shaped semiconductor layer; a fifth step of forming a gate electrode and a gate line around the first pillar-shaped semiconductor layer and forming a contact electrode and a contact line around the second pillar-shaped semiconductor layer; and a sixth step of forming first to fifth contacts.