The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2017

Filed:

Apr. 23, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wei-Yu Ma, Taitung, TW;

Chia-Hui Chen, Hsinchu, TW;

Yi-Ting Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 49/02 (2006.01); H01L 27/06 (2006.01); H01L 29/93 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 27/0207 (2013.01); H01L 27/0629 (2013.01); H01L 27/0682 (2013.01); H01L 29/93 (2013.01);
Abstract

A semiconductor device includes a first semiconductor structure having a first active region pattern density. The semiconductor device further includes a second semiconductor structure having a second active region pattern density, wherein the second semiconductor structure comprises a first resistive element. The semiconductor device further includes a third semiconductor structure having a third active region pattern density, wherein the third semiconductor structure includes a second resistive element. The second semiconductor structure is adjacent to the first semiconductor structure and adjacent to the third semiconductor structure. The first semiconductor structure, the second semiconductor structure and the third semiconductor structure do not overlap.


Find Patent Forward Citations

Loading…