The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Mar. 11, 2015
Applicants:
Makoto Nagamine, Seoul, KR;
Youngmin Eeh, Seoul, KR;
Koji Ueda, Seoul, KR;
Daisuke Watanabe, Seoul, KR;
Kazuya Sawada, Seoul, KR;
Toshihiko Nagase, Seoul, KR;
Inventors:
Makoto Nagamine, Seoul, KR;
Youngmin Eeh, Seoul, KR;
Koji Ueda, Seoul, KR;
Daisuke Watanabe, Seoul, KR;
Kazuya Sawada, Seoul, KR;
Toshihiko Nagase, Seoul, KR;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 43/00 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);
Abstract
According to one embodiment, a magnetoresistive memory device, includes a metal buffer layer provided on a substrate, a crystalline metal nitride buffer layer provided on the metal buffer layer, and a magnetoresistive element provided on the metal nitride buffer layer. The metal nitride buffer layer and the metal buffer layer contain a same material.