The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2017

Filed:

Mar. 29, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Wei Lin, Santa Clara, CA (US);

Troy L. Graves-Abe, Wappingers Falls, NY (US);

Donald F. Canaperi, Bridgewater, CT (US);

Spyridon Skordas, Troy, NY (US);

Matthew T. Shoudy, Niskayuna, NY (US);

Binglin Miao, Loudonville, NY (US);

Raghuveer R. Patlolla, Guilderland, NY (US);

Sanjay C. Mehta, Niskayuna, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 21/762 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/76251 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 25/50 (2013.01); H01L 2224/29084 (2013.01); H01L 2224/29187 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/832 (2013.01); H01L 2224/83031 (2013.01); H01L 2224/83193 (2013.01); H01L 2224/83896 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01007 (2013.01); H01L 2924/01008 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/0503 (2013.01); H01L 2924/059 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/206 (2013.01); H01L 2924/2064 (2013.01); H01L 2924/20109 (2013.01);
Abstract

A bonding material stack for wafer-to-wafer bonding is provided. The bonding material stack may include a plurality of layers each including boron and nitrogen. In one embodiment, the plurality of layers may include: a first boron oxynitride layer for adhering to a wafer; a boron nitride layer over the first boron oxynitride layer; a second boron oxynitride layer over the boron nitride layer; and a silicon-containing boron oxynitride layer over the second boron oxynitride layer.


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