The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2017

Filed:

Jul. 07, 2016
Applicant:

Deca Technologies Inc., Tempe, AZ (US);

Inventors:

Timothy L. Olson, Phoenix, AZ (US);

William Boyd Rogers, Raleigh, NC (US);

Ferdinand Aldas, San Pedro, PH;

Assignee:

Deca Technologies Inc., Tempe, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/75 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0381 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/742 (2013.01); H01L 2224/7501 (2013.01); H01L 2224/75651 (2013.01);
Abstract

A method of removing at least a portion of a layer of material from over a semiconductor substrate that can include dispensing an etching solution over the semiconductor substrate to form a pool of etching solution on the layer of material, wherein a footprint of the pool of etching solution is less than a footprint of the semiconductor substrate. The pool of etching solution and the semiconductor substrate can be moved with respect to each other. A pool boundary of the pool of etching solution can be defined on the semiconductor substrate with at least one air-knife such that the pool of etching solution etches the layer of material over the semiconductor substrate within the footprint of the pool of etching solution. The etching solution and at least a portion of the layer of material etched by the etching solution can be removed with the at least one air-knife.


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