The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Apr. 13, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Pin-Hong Chen, Yunlin County, TW;
Kuo-Chih Lai, Tainan, TW;
Min-Chuan Tsai, New Taipei, TW;
Chun-Chieh Chiu, Keelung, TW;
Li-Han Chen, Tainan, TW;
Yen-Tsai Yi, Tainan, TW;
Wei-Chuan Tsai, Changhua County, TW;
Kuo-Chin Hung, Changhua County, TW;
Hsin-Fu Huang, Tainan, TW;
Chi-Mao Hsu, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
The present invention utilizes a barrier layer in the contact hole to react with an S/D region to form a silicide layer. After forming the silicide layer, a directional deposition process is performed to form a first metal layer primarily on the barrier layer at the bottom of the contact hole, so that very little or even no first metal layer is disposed on the barrier layer at the sidewall of the contact hole. Then, the second metal layer is deposited from bottom to top in the contact hole as the deposition rate of the second metal layer on the barrier layer is slower than the deposition rate of the second metal layer on the first metal layer.