The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2017

Filed:

Nov. 20, 2015
Applicant:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventors:

Huayong Hu, Shanghai, CN;

Lihua Ding, Shanghai, CN;

Weiming He, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/66 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01); G03F 9/00 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G03F 9/7034 (2013.01); H01L 21/0276 (2013.01); H01L 21/0332 (2013.01); H01L 21/31144 (2013.01); H01L 23/544 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method for fabricating a semiconductor structure is provided. The method includes providing a semiconductor substrate; and forming a plurality of semiconductor devices on the semiconductor substrate. The method also includes forming a dielectric layer covering the plurality of the semiconductor devices on the semiconductor substrate; and forming an optical auxiliary layer configured to reflect a portion of a levelness-detecting light and absorb a portion of the levelness detecting light transmitting through the optical auxiliary layer during a levelness-detecting process over the dielectric layer. Further, the method includes forming a photoresist layer over the optical auxiliary layer; and detecting a levelness of the semiconductor substrate and exposing the photoresist layer to form a patterned photoresist layer.


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