The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2017

Filed:

Mar. 24, 2016
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Kenji Suzuki, Yamanashi, JP;

Koji Maekawa, Yamanashi, JP;

Takanobu Hotta, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/285 (2006.01); C23C 16/46 (2006.01); C23C 16/08 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28556 (2013.01); C23C 16/08 (2013.01); C23C 16/455 (2013.01); C23C 16/46 (2013.01); H01L 21/28568 (2013.01); H01L 21/76841 (2013.01); H01L 21/76879 (2013.01); H01L 21/76883 (2013.01);
Abstract

In a method of forming a tungsten film, an initial tungsten film and a main tungsten film are formed on an underlying film of a substrate. The initial tungsten film is formed on the underlying film by sequentially supplying a tungsten chloride gas and a reduction gas into a chamber while supplying a purging gas between the supplies of the tungsten chloride gas and the reduction gas, or by simultaneously supplying the tungsten chloride gas and the reduction gas. The main tungsten film is formed on the initial tungsten film by sequentially supplying the tungsten chloride gas and the reduction gas into the chamber while purging an inside of the chamber between the supplies of the tungsten chloride gas and the reduction gas. A supply amount of the tungsten chloride gas in forming the initial film is smaller than that in forming the main tungsten film.


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