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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9634132 B1

PDFFull Text
Expired
Date of Patent:
Apr. 25, 2017

Filed:

Feb. 19, 2014

Semiconductor structures and methods for multi-level band gap energy of nanowire transistors to improve drive current

Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Tsung-Hsing Yu, Taipei, TW;

Chia-Wen Liu, Taipei, TW;

Yeh Hsu, Taoyuan, TW;

Jean-Pierre Colinge, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Attorney:

Jones Day

Primary Examiner:

Jose R Diaz

Int. Cl.
CPC ...
H01L 29/775 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/775 (2013.01); H01L 29/068 (2013.01); H01L 29/66439 (2013.01); H01L 29/0673 (2013.01); H01L 29/0676 (2013.01); H01L 29/165 (2013.01);
Abstract

A semiconductor device is provided having a channel formed from a nanowire with multi-level band gap energy. The semiconductor device comprises a nanowire structure formed between source and drain regions. The nanowire structure has a first band gap energy section joined with a second band gap energy section. The first band gap energy section is coupled to the source region and has a band gap energy level greater than the band gap energy level of the second band gap energy section. The second band gap energy section is coupled to the drain region. The first band gap energy section comprises a first material and the second band gap energy section comprises a second material wherein the first material is different from the second material. The semiconductor device further comprises a gate region around the junction between the first band gap energy section and the second band gap energy section.

Find Patent Forward Citations

Yu, Tsung-Hsing. (2017). Semiconductor structures and methods for multi-level band gap energy of nanowire transistors to improve drive current (U.S. Patent No. 9634132). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9634132

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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