The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

Dec. 16, 2015
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chen-Hua Yu, Hsinchu, TW;

Jing-Cheng Lin, Hsinchu, TW;

Tsei-Chung Fu, Toufen Township, Miaoli County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 21/3205 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3121 (2013.01); H01L 21/02068 (2013.01); H01L 21/02175 (2013.01); H01L 21/02244 (2013.01); H01L 21/02252 (2013.01); H01L 21/32051 (2013.01); H01L 21/56 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 23/528 (2013.01); H01L 23/53228 (2013.01); H01L 23/53295 (2013.01); H01L 24/32 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/181 (2013.01);
Abstract

A package structure and method for forming the same are provided. The package structure includes a substrate and a semiconductor die formed over the substrate. The package structure also includes a package layer covering the semiconductor die and a conductive structure formed in the package layer. The package structure includes a first insulating layer formed on the conductive structure, and the first insulating layer includes monovalent metal oxide. A second insulating layer is formed between the first insulating layer and the package layer. The second insulating layer includes monovalent metal oxide, and a weight ratio of the monovalent metal oxide in the second insulating layer is greater than a weight ratio of the monovalent metal oxide in first insulating layer.


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