The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Oct. 22, 2015
Applicant:
Ebara Corporation, Tokyo, JP;
Inventors:
Akira Susaki, Tokyo, JP;
Keiichi Kurashina, Tokyo, JP;
Assignee:
Ebara Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); C23F 1/18 (2006.01); C09K 13/00 (2006.01); C09G 1/02 (2006.01); C09G 1/04 (2006.01); C09K 13/06 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01); H05K 3/06 (2006.01); C23F 1/10 (2006.01); C23F 1/14 (2006.01); C23F 1/16 (2006.01); C23F 1/44 (2006.01); C09K 13/02 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76883 (2013.01); C09G 1/02 (2013.01); C09G 1/04 (2013.01); C09K 13/00 (2013.01); C09K 13/02 (2013.01); C09K 13/06 (2013.01); C23F 1/10 (2013.01); C23F 1/14 (2013.01); C23F 1/16 (2013.01); C23F 1/18 (2013.01); C23F 1/44 (2013.01); H01L 21/30604 (2013.01); H01L 21/32134 (2013.01); H01L 21/76802 (2013.01); H01L 21/76879 (2013.01); H05K 3/067 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03912 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13157 (2013.01);
Abstract
An etching liquid which can selectively remove only a copper layer in an etching process of a multilayer structure including a cobalt layer and the copper layer is disclosed. The etching liquid is an etching liquid for etching the copper layer in the multilayer structure including the copper layer and the cobalt layer. This etching liquid includes at least one acid selected from a group consisting of citric acid, oxalic acid, malic acid, and malonic acid, and hydrogen peroxide, the etching liquid having pH in a range of 4.3 to 5.5.