The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

Feb. 13, 2014
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Weifeng Ye, San Jose, CA (US);

Mei-yee Shek, Palo Alto, CA (US);

Mihaela Balseanu, Sunnyvale, CA (US);

Xiaojun Zhang, Santa Clara, CA (US);

Xiaolan Ba, San Jose, CA (US);

Yu Jin, Santa Clara, CA (US);

Li-Qun Xia, Cupertino, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28562 (2013.01); H01L 21/76849 (2013.01); H01L 21/76862 (2013.01); H01L 21/76864 (2013.01); H01L 21/76883 (2013.01); H01L 21/76834 (2013.01);
Abstract

Embodiments of the present invention provide processes to selectively form a metal layer on a conductive surface, followed by flowing a silicon based compound over the metal layer to form a metal silicide layer. In one embodiment, a substrate having a conductive surface and a dielectric surface is provided. A metal layer is then deposited on the conductive surface. A metal silicide layer is formed as a result of flowing a silicon based compound over the metal layer. A dielectric is formed over the metal silicide layer.


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