The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Jun. 17, 2016
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Kenichi Abe, Kawasaki, JP;
Masanobu Shirakawa, Chigasaki, JP;
Mizuho Yoshida, Yokohama, JP;
Takuya Futatsuyama, Yokohama, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/10 (2006.01); G11C 16/32 (2006.01); G11C 16/08 (2006.01); G11C 16/16 (2006.01); G11C 29/42 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/16 (2013.01); G11C 16/32 (2013.01); G11C 16/3445 (2013.01); G11C 16/3481 (2013.01); G11C 29/42 (2013.01); G11C 2211/5621 (2013.01); G11C 2211/5648 (2013.01);
Abstract
A semiconductor memory device includes: first to third pages; first to third word line; and row decoder. In data writing, data is written into the first page before data is written into the second page. The row decoder is configured to apply first to third verify voltages to the gates of the first to third memory cells in a program verify operation.
Abe, Kenichi. (2017). Semiconductor memory device (U.S. Patent No. 9633745). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9633745
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile