Method for manufacturing lateral double-diffused metal oxide semiconductor transistor

Abstract

The present disclosure relates to a lateral double-diffused metal oxide semiconductor transistor and a method for manufacturing the same. In the method, a high-voltage gate dielectric is formed at a surface of a semiconductor layer. A thin gate dielectric is formed above the substrate and has at least a portion adjacent to the high-voltage gate dielectric. A gate conductor is formed above the thin gate dielectric and the high-voltage gate dielectric. A first mask is used for patterning the gate conductor to define a first sidewall of the gate conductor above the thin gate dielectric. A second mask is used for patterning the gate conductor to define a second sidewall of the gate conductor at least partially above the high-voltage gate dielectric. Source and drain regions are formed to have a first doping type. The method further comprises doping through the first mask to form a body region of a second doping type. The second doping type is opposite to the first doping type. The method simplifies a manufacturer process and improves reliability of the resultant devices.