The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2017

Filed:

Mar. 30, 2015
Applicant:

Stmicroelectronics, Inc., Calamba, Laguna, PH;

Inventors:

Godfrey Dimayuga, San Pablo, PH;

Jefferson Talledo, Calamba, PH;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01L 23/13 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/486 (2013.01); H01L 21/4857 (2013.01); H01L 23/13 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 23/3121 (2013.01); H01L 23/3128 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48228 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/15153 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15313 (2013.01);
Abstract

A semiconductor device may include a multi-layer interconnect board having in stacked relation a lower conductive layer, a dielectric layer, and an upper conductive layer. The dielectric layer may have a recess formed with a bottom and sloping sidewall extending upwardly from the bottom. The upper conductive layer may include upper conductive traces extending across the sloping sidewall, and the lower conductive layer may include lower conductive traces. The semiconductor device may include vias extending between the lower and upper conductive layers, an IC carried by the multi-layer interconnect board in the recess, bond wires coupling upper conductive traces to the IC, and encapsulation material adjacent the IC and adjacent portions of the multi-layer interconnect board.


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