The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2017

Filed:

Dec. 03, 2010
Applicants:

Tsuyoshi Moriya, Nirasaki, JP;

Hiroyuki Nakayama, Nirasaki, JP;

Hiroshi Nagaike, Nirasaki, JP;

Inventors:

Tsuyoshi Moriya, Nirasaki, JP;

Hiroyuki Nakayama, Nirasaki, JP;

Hiroshi Nagaike, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B08B 7/00 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32862 (2013.01); H01J 37/3244 (2013.01); H01J 37/32449 (2013.01);
Abstract

A plasma processing apparatus includes a processing chamber, in which a wafer W is plasma-processed, and a CPU controlling an operation of each component. A processing gas is introduced into the processing chamber under a first condition defined by a flow rate and a molecular weight of the processing gas, specifically based on a magnitude of a product A(=Q×m) of the flow rate Qand the molecular weight mof the processing gas, and a surface of the wafer W is physically or chemically etched. And then, a pre-purge gas which may be identical to or different from the processing gas is introduced into the processing chamber through a shower head under a second condition derived from the first condition.


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