The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Sep. 09, 2015
Applicant:
Freescale Semiconductor, Inc., Austin, TX (US);
Inventors:
Jon S. Choy, Austin, TX (US);
Michael G. Neaves, Austin, TX (US);
Assignee:
NXP USA, INC., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/38 (2006.01); H03K 3/01 (2006.01); H02M 3/07 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 3/07 (2013.01); H02M 2001/0041 (2013.01); H02M 2003/077 (2013.01);
Abstract
A charge pump comprises one or more pump stages for providing a negative boosted output voltage. Each of the one or more pump stages comprises a P-channel transistor formed in an isolated P-well and an N-channel transistor coupled in series with the P-channel transistor. Forming the P-channel transistor in the isolated P-well essentially eliminates a raised threshold voltage due to body effect.