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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9620633 B1

PDFFull Text
Expired
Date of Patent:
Apr. 11, 2017

Filed:

Feb. 15, 2016

Quantum well fin-like field effect transistor (qwfinfet) having a two-section combo qw structure

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Yu-Lien Huang, Hsinchu County, TW;

Chun-Hsiang Fan, Taoyuan County, TW;

Yung-Ta Li, Kaohsiung, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Thomas L Dickey

Assistant Examiner:

Changhyun Yi

Int. Cl.
CPC ...
H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/15 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/775 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/15 (2013.01); H01L 29/155 (2013.01); H01L 29/66439 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 29/0673 (2013.01); H01L 2029/7857 (2013.01);
Abstract

The present disclosure provides a quantum well fin field effect transistor (QWFinFET). The QWFinFET includes a semiconductor fin over a substrate and a combo quantum well (QW) structure over the semiconductor fin. The combo QW structure includes a QW structure over a top portion of the semiconductor fin and a middle portion of the semiconductor fin. The semiconductor fin and the QW comprise different semiconductor materials. The QWFinFET also includes a gate stack over the combo QW structure.

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Quick Actions:

Huang, Yu-Lien. (2017). Quantum well fin-like field effect transistor (qwfinfet) having a two-section combo qw structure (U.S. Patent No. 9620633). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9620633

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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