The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
May. 15, 2015
Applicants:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
National Taiwan University, Taipei, TW;
Inventors:
Assignees:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
National Taiwan University, Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/43 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42364 (2013.01); H01L 29/66431 (2013.01); H01L 29/7786 (2013.01);
Abstract
A multi-layered semiconductor device and method of manufacture are provided. In an embodiment a first semiconductor layer, a first insulator layer, a second semiconductor layer, a second insulator layer, and a third semiconductor layer are formed over a substrate. A first transistor comprises the first semiconductor layer, the first insulator layer, and the second semiconductor layer, and a second transistor comprises the second semiconductor layer, the second insulator layer, and the third semiconductor layer.