The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Nov. 16, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chin-I Liao, Tainan, TW;
Shih-Chieh Chang, Taipei, TW;
Chun-Ju Huang, Chiayi, TW;
Chien-Wei Lee, Kaohsiung, TW;
Chii-Ming Wu, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A FinFET including a substrate, a plurality of isolators, a gate stack, and strained material portions is provided. The substrate includes at least two fins thereon. The isolators are disposed on the substrate, and each of the insulators between the fins has a recess profile. The gate stack is disposed over portions of the fins and over the insulators. The strained material portions cover the fins revealed by the gate stack. In addition, a method for fabricating the FinFET is provided.