The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Sep. 12, 2012
Patrice Besse, Tournefeuille, FR;
Alexis Huot-marchand, Fonsorbes, FR;
Jean-philippe Laine, Cugnaux, FR;
Alain Salles, Ramonville St Agne, FR;
Patrice Besse, Tournefeuille, FR;
Alexis Huot-Marchand, Fonsorbes, FR;
Jean-Philippe Laine, Cugnaux, FR;
Alain Salles, Ramonville St Agne, FR;
NXP USA, Inc., Austin, TX (US);
Abstract
A semiconductor device is provided which comprises an ESD protection device. The structure of the semiconductor device comprises a p-doped isolated region in which a structure is manufactured which operates as a Silicon Controlled Rectifier which is coupled between an I/O pad and a reference voltage or ground voltage. The semiconductor device also comprises a pnp transistor which is coupled parallel to the Silicon Controlled Rectifier. The base of the transistor is coupled to the gate of the Silicon Controlled Rectifier. In an optional embodiment, the base and gate are also coupled to the I/O pad.